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IXFN 21N100Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
g fs
C iss
C oss
C rss
t d(on)
V DS = 20 V; I D = 0.5 ? I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
16
22
5900
550
90
21
S
pF
pF
pF
ns
t r
18
t d(off)
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 ? (External)
18
60
ns
ns
M4 screws (4x) supplied
t f
12
ns
Dim.
Millimeter
Min. Max.
Min.
Inches
Max.
Q G(on)
170
nC
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Q GS
Q GD
R thJC
R thCK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
38
75
0.05
0.24
nC
nC
K/W
K/W
C
D
E
F
G
H
J
K
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
L
M
N
0.76
12.60
25.15
0.84
12.85
25.42
0.030
0.496
0.990
0.033
0.506
1.001
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
O
P
Q
R
S
1.98
4.95
26.54
3.94
4.72
2.13
5.97
26.90
4.42
4.85
0.078
0.195
1.045
0.155
0.186
0.084
0.235
1.059
0.174
0.191
I S
V GS = 0 V
21
A
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
I SM
V SD
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
84
1.5
A
V
t rr
Q RM
I RM
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
1.4
8
250
ns
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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